| 摘要 |
A switching element for a memory device includes a base layer including a plurality of line-type trenches. First insulation patterns are formed on the base layer excluding the trenches. First diode portions are formed on the bottoms of the trenches in the form of a thin film. Second insulation patterns are formed on the first diode portions and are spaced apart from each other to form holes in the trenches having the first diode portions provided therein. Square pillar-shaped second diode portions are formed in the holes over the first diode portions. |
