SEMICONDUCTOR DIE CONTACT STRUCTURE AND METHOD

摘要

PURPOSE: A semiconductor die contact structure is provided to reduce flow resistance from a conductive pillar to a metal layer by forming the conductive pillar in contact with a first metal contact unit instead of a contact pad. CONSTITUTION: A metallization layer(103) is formed on a substrate(101). The metallization layer includes a first dielectric layer(109), a second dielectric layer(111), a first conductive layer(113), and a second conductive layer(115). A first passivation layer(107) is formed on the uppermost conductive layer. A first metal contact unit(105) is positioned in the first passivation layer. The first metal contact unit has the thickness of 15000 angstroms.