fabrication mathod of field emission device with Si tip coated SiC and field emission device thereby,申请号KR20090087487-传众专利搜索

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发明名称	fabrication mathod of field emission device with Si tip coated SiC and field emission device thereby
摘要
申请公布号	KR101034887(B1)	申请公布日期	2011.05.17
申请号	KR20090087487	申请日期	2009.09.16
申请人		发明人
分类号	H01J1/304	主分类号	H01J1/304
代理机构		代理人
主权项
地址

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