发明名称 |
TRIGATE STATIC RANDOM-ACCESS MEMORY WITH INDEPENDENT SOURCE AND DRAIN ENGINEERING, AND DEVICES MADE THEREFROM |
摘要 |
A static random-access memory circuit includes at least one access device including source and drain sections for a pass region, at least one pull-up device and at least one pull-down device including source-and-drain sections for a pull-down region. The static random-access memory circuit is configured with external resistivity (Rext) for the pull-down region to be lower than Rext for the pass region. Processes of achieving the static random-access memory circuit include source-and-drain epitaxy. |
申请公布号 |
KR20110050721(A) |
申请公布日期 |
2011.05.16 |
申请号 |
KR20117007714 |
申请日期 |
2009.12.09 |
申请人 |
INTEL CORPORATION |
发明人 |
PILLARESITTY RAVI;RACHMADY WILLY;DOYLE BRIAN;CHAU ROBERT S. |
分类号 |
H01L21/8244;H01L27/11 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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