| 摘要 |
PURPOSE: Forming of off-axis null magnetic field locus for ensuring improved uniformity in plasma deposition and etching is provided to enable a material layer to be deposited on a substrate using physical vapor deposition. CONSTITUTION: A device for depositing or etching a material layer on a substrate comprises a process chamber, a plurality of co-axial magnetic field sources and a substrate support. The process chamber is used for forming charged species. The magnetic filed sources are used for forming null magnetic field locus in an area comprising the charged species. The substrate support fixes the substrate during deposition or etching. The null magnetic field locus is radially offset from a central shaft, which is formed by the central part of the co-axial sources.
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