发明名称 MASK MATERIAL COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY
摘要 PURPOSE: A mask material composition is provided to enable use for a diffusion barrier of an impurity diffusing component into a semiconductor substrate. CONSTITUTION: A mask material composition comprises a siloxane resin containing a repeating unit represented by chemical formula (a1). In chemical formula (a1), R1 is a single bond or C1~5 alkylene group; and R2 is C6~20 aryl group. A method for forming an impurity diffusion layer comprises the steps of: selectively applying the mask material composition to a semiconductor substrate; and selectively applying impurity diffusion components to the semiconductor substrate using the mask material composition as a mask.
申请公布号 KR20110050369(A) 申请公布日期 2011.05.13
申请号 KR20100108582 申请日期 2010.11.03
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 TAKAHASHI MOTOKI;MORITA TOSHIRO;HIRAI TAKAAKI
分类号 C08L83/04;C08G77/04;C09D183/04;H01L31/042;H01L31/068 主分类号 C08L83/04
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