发明名称 |
MASK MATERIAL COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY |
摘要 |
PURPOSE: A mask material composition is provided to enable use for a diffusion barrier of an impurity diffusing component into a semiconductor substrate. CONSTITUTION: A mask material composition comprises a siloxane resin containing a repeating unit represented by chemical formula (a1). In chemical formula (a1), R1 is a single bond or C1~5 alkylene group; and R2 is C6~20 aryl group. A method for forming an impurity diffusion layer comprises the steps of: selectively applying the mask material composition to a semiconductor substrate; and selectively applying impurity diffusion components to the semiconductor substrate using the mask material composition as a mask. |
申请公布号 |
KR20110050369(A) |
申请公布日期 |
2011.05.13 |
申请号 |
KR20100108582 |
申请日期 |
2010.11.03 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
TAKAHASHI MOTOKI;MORITA TOSHIRO;HIRAI TAKAAKI |
分类号 |
C08L83/04;C08G77/04;C09D183/04;H01L31/042;H01L31/068 |
主分类号 |
C08L83/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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