| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor device having a storage circuit which is easily manufactured, and additionally recordable, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device is provided which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers, and also the method is provided for manufacturing the same. Further, the semiconductor device having the storage circuit which is nonvolatile, easily manufactured, and additionally recordable and a method of manufacturing the same are provided. A semiconductor device has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
