发明名称 POLYIMIDE AND PHOTORESIST RESIN COMPOSITION COMPRISING THEREOF
摘要 The present invention provides polyimide applied to the buffer coating of semiconductors and a photosensitive resin composition including the same. The polyimide is a polyimide polymer represented by Chemical Formula 1 below. Further, the present invention provides a photosensitive resin composition, including 1) BDA-series soluble polyimide having an i-ray permeability of 70% or more; 2) a polyamic acid having elongation of 40% or more; 3) a novolak resin, and 4) diazonaphthoquinone-series photosensitive substance and having a high resolution, high sensitivity, an excellent film characteristic, and mechanical physical properties which are the requirements of semiconductor buffer coating.
申请公布号 US2011111341(A1) 申请公布日期 2011.05.12
申请号 US20100940403 申请日期 2010.11.05
申请人 LG CHEM, LTD. 发明人 KIM SANG WOO;PARK CHANHYO;KIM KYUNGJUN;SEONG HYERAN;SHIN SEJIN;JEONG HYE WON;JO JUNG HO
分类号 G03F7/004;C08G69/26 主分类号 G03F7/004
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