SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE

摘要

Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.