| 摘要 |
Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100μm2 or more per 1μm3 of the active layer.
|
