发明名称 ALUMINUM GRID AS BACKSIDE CONDUCTOR ON EPITAXIAL SILICON THIN FILM SOLAR CELLS
摘要 One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate.
申请公布号 US2011108100(A1) 申请公布日期 2011.05.12
申请号 US20090617382 申请日期 2009.11.12
申请人 SIERRA SOLAR POWER, INC. 发明人 YU CHENTAO;XU ZHENG;HENG JIUNN BENJAMIN;FU JIANMING
分类号 H01L31/00;H01L31/18 主分类号 H01L31/00
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