| 摘要 |
<p>Disclosed is a nonvolatile semiconductor storage device wherein deterioration of a tunnel insulation film caused by writing and erasing stress can be suppressed. Specifically disclosed is a nonvolatile semiconductor storage device which comprises a semiconductor layer (1), a first insulating film (3) which is formed on the semiconductor layer and composed of a single layer film containing silicon oxide or silicon oxynitride, a charge trapping film (5) which is formed on the first insulating film, a second insulating film (6) which is formed on the charge trapping film, and a control gate electrode (7) which is formed on the second insulating film. Atoms of a metal selected from a group consisting of Al, Hf, Zr, Ti and Mg are present in the interface between the first insulating film and the charge trapping film.</p> |
