METHOD OF FORMING A THIN FILM

摘要

PURPOSE: A thin-film forming method is provided to form a magnetic semiconductor film consisting of ZnCrO since a ZnO target doped with Cr of 0.1mol% to 30mol% is formed on a substrate in a sputtering technique. CONSTITUTION: A thin-film forming method comprises next steps. A ZnO target doped with Cr of 0.1mol% to 30mol% is loaded in a sputtering deposition chamber and then a substrate is loaded. Power is supplied to the target and a ZnO film doped with Cr of 0.1mol% to 30mol% is formed on the substrate. A ZnO film doped with Cr of 0.1mol% to 5mol% is formed using a ZnO target doped with Cr of 0.1mol% to 5mol%. ZnCrO, which is formed by doping Cr on ZnO, is ferromagnetic substance. Cr powder of 0.1mol% to 30mol% is mixed with ZnO powder and then a target is manufactured using the mixed power. The target is sintered at a temperature of 800°C to 1000°C in a furnace for 5 to 7 hours.