SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of improving connection reliability between a gate electrode and a plug. SOLUTION: An MIPS electrode where a gate electrode G1 of a MISFET is constituted of a lamination film of a metal film MF2 and a polysilicon film PF1 is used. By a first feature point where an opening diameter of a gate contact hole GCNT 1 is made larger compared with a gate length of the gate electrode G1 constituted by the MIPS electrode and a second feature point where a recessed part CP1 is formed at a side surface of the metal film MF2 constituting the gate electrode G1, gate resistance (parasitic resistance) can be more reduced and the connection reliability between the gate electrode G1 and the gate plug GPLG 1 is improved. COPYRIGHT: (C)2011,JPO&INPIT