| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high quality single crystal body of GaN, AlN, AlGaN or the like, which has little thickness distribution, and is almost free from dislocations caused by temperature change and impurities. SOLUTION: The method for producing a single crystal body includes: a process of rotating a seed substrate 3a provided in such a manner that its main surface for forming a single crystal 3b becomes horizontal, so that the rotation axis A indicates the vertical direction; and a process of supplying either one of a group 3 element gas and group 5 element gas from an internal cylinder part 4a and the other one of the group 3 element gas and group 5 element gas from a part between the internal cylinder part 4a and an external cylinder part 4b to the seed substrate 3a, in a gas supply tube 4 which has a gas supply port 4c opening in the horizontal direction at its tip, and is constituted of the external cylinder part 4b and the internal cylinder part 4a having a coaxial structure, and in which the central axis B of the gas supply port 4c of the internal cylinder part 4a is directed in the vertical direction and separated from the extended line of the rotation axis A. COPYRIGHT: (C)2011,JPO&INPIT
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