| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal which is suitable for a power device or the like needing high pressure resistance and is suited for production of a large-diameter silicon single crystal scarcely including oxygen, and to provide a silicon single crystal wafer. SOLUTION: There are provided a silicon single crystal wafer which is grown by the Czochralski method, has an oxygen concentration of≤1×10<SP>17</SP>atoms/cm<SP>3</SP>(ASTM'79) and has an in-plane distribution of electric resistivity of≤10%, and a method for producing the silicon single crystal. The method is characterized by using for holding at least a raw material melt, a crucible which is composed of a material having a higher melting point than silicon and containing no oxygen atom in composition, and by applying a magnetic field for suppressing the convection of the raw material melt when a silicon single crystal is withdrawn from a raw melt by the Czochralski method. COPYRIGHT: (C)2011,JPO&INPIT
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