发明名称 |
METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL |
摘要 |
A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the <1-100> direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of −5° to 5° from the {01-10} plane.
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申请公布号 |
US2011110840(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
US20090054373 |
申请日期 |
2009.06.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD |
发明人 |
MIYANAGA MICHIMASA;MIZUHARA NAHO;TANIZAKI KEISUKE;SATOH ISSEI;NAKAHATA HIDEAKI;ARAKAWA SATOSHI;YAMAMOTO YOSHIYUKI;SAKURADA TAKASHI |
分类号 |
C30B29/40;C01B21/06;C30B23/02;C30B23/06 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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