Germanium substrate for epitaxial deposition of semiconductor A3B5 and A2B6 compounds for multijunction solar cells is prepared as single-crystalline film with thickness not more than 5 micrometers. The film has a form of rectangles where non-coated substrate areas (clearances) take no more than 5% of total surface of the substrate, the width of the clearances being smaller than 5 micrometers. The film is implemented by deposition and subsequent recrystallization.
