EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE

摘要

The invention relates to a method for manufacturing a modified structure (801) comprising a layer of semiconductor modified graphene (83) on a substrate (82), including the following consecutive steps: providing an initial structure (800) comprising at least one substrate (81), forming a graphene layer (82) on the substrate, and hydrogenating the initial structure (800) by means of exposing said structure to atomic hydrogen (85), and characterized in that the step of hydrogenating the graphene layer is carried out with a exposure dose of between 100 and 4,000 Langmuirs, and forms a modified graphene layer.