发明名称 |
MANUFACTURING METHOD FOR ELECTRODE FOR POWER STORAGE DEVICE, AND MANUFACTURING METHOD FOR POWER STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To achieve alleviation of adverse effects of cubical expansion of an active material. <P>SOLUTION: In the manufacturing method of an electrode for a power storage device having an active material over one of surfaces of a current collector, a conductive body functioning as a current collector is formed, a mixture layer including an amorphous region and a microcrystal region is formed over one of surfaces of the conductive body, the microcrystal area is made exposed by removing a part or all of the amorphous region through selective etching of the mixture layer, the active material is formed, and alleviation of adverse effects due to cubical expansion of the active material is achieved. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011096646(A) |
申请公布日期 |
2011.05.12 |
申请号 |
JP20100214904 |
申请日期 |
2010.09.27 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KURISHIRO KAZUKI;MOMO JUNPEI;MATSUBARA RIE |
分类号 |
H01M4/1395;H01G11/06;H01G11/22;H01M4/134 |
主分类号 |
H01M4/1395 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|