| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a high breakdown voltage. SOLUTION: The method includes the steps of: performing ion-implantation selectively using masks to a semiconductor layer and forming simultaneously in a semiconductor layer a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type in which a first conductivity type impurity concentration is lower than that in the first semiconductor region; forming a source region of a second conductivity type on the first semiconductor region; forming a drain region of the second conductivity type on the second semiconductor region at a region that is on the opposite side of the source region from the gate electrode; and forming a drift region of the second conductivity type in a surface area of the semiconductor layer between the gate electrode and the drain region, being in contact with the drain region, in which an impurity concentration is lower than that in the drain region. COPYRIGHT: (C)2011,JPO&INPIT
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