| 摘要 |
The device is equipped with a crucible main body (4), wherein silicon carbide raw material (5), which is the raw material for silicon carbide single crystals (20), and a seed crystal (7), whereon a sublimation gas obtained by sublimating the silicon carbide raw material (5) is recrystallized, that are accommodated facing each other, and multiple guide members (8) are provided inside the crucible main body (4). Circular openings are formed in the guide members (8) at positions corresponding to the seed crystal (7), and are provided at intervals from each other between the silicon carbide raw material (5) and the seed crystal (7).
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