发明名称 METHOD OF FORMING ASYMMETRIC SPACERS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE USING ASYMMETRIC SPACERS
摘要 A method of fabricating asymmetrical spacers, structures fabricated using asymmetrical spacers and an apparatus for fabricating asymmetrical spacers. The method includes: forming on a substrate, a structure having a top surface and opposite first and second sidewalls and having a longitudinal axis parallel to the sidewalls; forming a conformal layer on the top surface of the substrate, the top surface of the structure and the sidewalls of the structure; tilting the substrate about a longitudinal axis relative to a flux of reactive ions, the flux of reactive ions striking the conformal layer at acute angle; and exposing the conformal layer to the flux of reactive ions until the conformal layer is removed from the top surface of the structure and the top surface of the substrate leaving a first spacer on the first sidewall and a second spacer on the second sidewall, the first spacer thinner than the second spacer.
申请公布号 US2011108895(A1) 申请公布日期 2011.05.12
申请号 US20110983477 申请日期 2011.01.03
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHENG KANGGUO;LI XI;WISE RICHARD STEPHEN
分类号 H01L29/78;H01L21/3065 主分类号 H01L29/78
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