发明名称 FERROELECTRIC THIN FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. <P>SOLUTION: The ferroelectric thin film includes a perovskite-type metal oxide formed on a substrate. The ferroelectric thin film further includes a columnar structure group formed of multiple columns each formed of a spinel-type metal oxide. The columnar structure group is in a state of standing in a direction perpendicular to the surface of the substrate, or in a state of slanting at a slant angle in a range of -10 or more to +10°or less with respect to the perpendicular direction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011093788(A) 申请公布日期 2011.05.12
申请号 JP20100218892 申请日期 2010.09.29
申请人 CANON INC;TOKYO INSTITUTE OF TECHNOLOGY;KYOTO UNIV 发明人 SHIMADA MIKIO;AEBA TOSHIAKI;IFUKU TOSHIHIRO;HAYASHI JUNPEI;KUBOTA JUN;FUNAKUBO HIROSHI;SHIMAKAWA YUICHI;AZUMA MASAKI;NAKAMURA YOSHITAKA
分类号 C01G51/00;B82Y30/00;B82Y99/00;C01G49/06;H01B3/00;H01B3/12;H01L21/8246;H01L27/105;H01L41/18;H01L41/187;H01L41/39 主分类号 C01G51/00
代理机构 代理人
主权项
地址