发明名称 |
FERROELECTRIC THIN FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. <P>SOLUTION: The ferroelectric thin film includes a perovskite-type metal oxide formed on a substrate. The ferroelectric thin film further includes a columnar structure group formed of multiple columns each formed of a spinel-type metal oxide. The columnar structure group is in a state of standing in a direction perpendicular to the surface of the substrate, or in a state of slanting at a slant angle in a range of -10 or more to +10°or less with respect to the perpendicular direction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011093788(A) |
申请公布日期 |
2011.05.12 |
申请号 |
JP20100218892 |
申请日期 |
2010.09.29 |
申请人 |
CANON INC;TOKYO INSTITUTE OF TECHNOLOGY;KYOTO UNIV |
发明人 |
SHIMADA MIKIO;AEBA TOSHIAKI;IFUKU TOSHIHIRO;HAYASHI JUNPEI;KUBOTA JUN;FUNAKUBO HIROSHI;SHIMAKAWA YUICHI;AZUMA MASAKI;NAKAMURA YOSHITAKA |
分类号 |
C01G51/00;B82Y30/00;B82Y99/00;C01G49/06;H01B3/00;H01B3/12;H01L21/8246;H01L27/105;H01L41/18;H01L41/187;H01L41/39 |
主分类号 |
C01G51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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