| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device structured of a MOS transistor having a trench gate structure, which secures a desired breaking capacity even when a unit cell is microfabricated, and suppresses variation of threshold voltages of respective cells. SOLUTION: The semiconductor device is structured of the MOS transistor having the trench gate structure. The transistor includes: a first conductive channel region formed between adjacent trench regions; two second conductive source regions; and a first conductive semiconductor region formed between the two second conductive source regions. The first conductive semiconductor region is formed to project in a rectangular shape from the two second conductive source regions to the first conductive channel region. A region, which is a boundary between the first conductive semiconductor region and the first conductive channel region, has concentration gradient of a first conductive impurity in a width direction of the trench region 200 dB/μm or more. COPYRIGHT: (C)2011,JPO&INPIT |
