发明名称 |
INDIUM TIN OXIDE SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM FABRICATED BY USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a transparent conductive film which does not corrode a lower part material and other materials due to the excellent etching working property and does not cause problems such as residual dross, and to provide a sputtering target for forming the transparent conductive film. SOLUTION: The indium tin oxide sputtering target includes indium oxide (In<SB>2</SB>O<SB>3</SB>), tin oxide (SnO<SB>2</SB>) and gallium. The content of tin atoms is 5 to 15 atomic percent of the total amount of indium atom and tin atom and the content of gallium atoms is 0.5 to 7 atomic percent of the total amount of indium atom, silver atom and gallium atom. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011094232(A) |
申请公布日期 |
2011.05.12 |
申请号 |
JP20100243669 |
申请日期 |
2010.10.29 |
申请人 |
SAMSUNG CORNING PRECISION MATERIALS CO LTD |
发明人 |
KANG SHIN HYUK;JUN HO CHOI;HWANG YONG GO;SANG CHEOL JUNG |
分类号 |
C23C14/34;C23C14/08;H01B1/08;H01B5/14;H01B13/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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地址 |
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