发明名称 INDIUM TIN OXIDE SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM FABRICATED BY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a transparent conductive film which does not corrode a lower part material and other materials due to the excellent etching working property and does not cause problems such as residual dross, and to provide a sputtering target for forming the transparent conductive film. SOLUTION: The indium tin oxide sputtering target includes indium oxide (In<SB>2</SB>O<SB>3</SB>), tin oxide (SnO<SB>2</SB>) and gallium. The content of tin atoms is 5 to 15 atomic percent of the total amount of indium atom and tin atom and the content of gallium atoms is 0.5 to 7 atomic percent of the total amount of indium atom, silver atom and gallium atom. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011094232(A) 申请公布日期 2011.05.12
申请号 JP20100243669 申请日期 2010.10.29
申请人 SAMSUNG CORNING PRECISION MATERIALS CO LTD 发明人 KANG SHIN HYUK;JUN HO CHOI;HWANG YONG GO;SANG CHEOL JUNG
分类号 C23C14/34;C23C14/08;H01B1/08;H01B5/14;H01B13/00 主分类号 C23C14/34
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