METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for processing a semiconductor device is provided to perform dry-etching after a high-k insulating film is wet-etched, thereby increasing a throughput. CONSTITUTION: A reflection barrier film is etched by Ar/HBr/02 gases(S2). A SiN film is etched by CF4/CHF3/O2 gases(S3). A MgO film is wet-etched by using an HF solution(S6). An HfO film is dry-etched by using BCl3/Cl2 gases(S7). It is inspected whether a sedimentation film remains on the surface of a wafer(S8).