| 摘要 |
<p>PURPOSE: A method for depositing a chalcogenide thin film is provided to make a Te precursor, a Ge precursor, and a Sb precursor to directly react each other, thereby depositing a chalcogenide thin film without a separate reducing agent. CONSTITUTION: A chalcogenide thin film is deposited without a reducing agent such as H2, NH3, and alcohol at a low temperature which is under 100°C. A Te precursor, a Ge precursor, and a Sb precursor directly react each other so that a chalcogenide thin film such as Ge-Te, Sb-Te, and Ge-Sb-Te are deposited on a TiN substrate. Si is coupled with Te in a Te precursor. Oxygen is coupled with Ge and Sb in the Ge precursor and Sb precursor. A deposition temperature is reduced between 50 and 80°C.</p> |
