发明名称 |
METHOD OF CREATING PHOTOLITHOGRAPHIC MASKS FOR SEMICONDUCTOR DEVICE FEATURES WITH REDUCED DESIGN RULE VIOLATIONS |
摘要 |
A method of creating photolithographic masks for semiconductor device features with reduced design rule violations is provided. The method begins by providing preliminary data that represents an overall mask pattern. The preliminary data is processed to decompose the overall mask pattern into a plurality of component mask patterns. Next, a design rule check is performed on the plurality of component mask patterns to identify tip-to-tip and tip-to-line violations in the plurality of component mask patterns. The method continues by modifying at least one of the plurality of component mask patterns in accordance with the identified violations to obtain a modified set of component mask patterns, wherein each mask pattern in the modified set of component mask patterns is void of tip-to-tip and tip-to-line violations. Photolithographic masks are then created for the modified set of component mask patterns.
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申请公布号 |
US2011111330(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
US20090617421 |
申请日期 |
2009.11.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SCHULTZ RICHARD;PATTISON JAMES |
分类号 |
G03F1/00;G06F17/50 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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地址 |
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