GROWTH OF PLANAR NON-POLAR {10-10} M-PLANE GALLIUM NITRIDE WITH HYDRIDE VAPOR PHASE EPITAXY (HVPE)

摘要

A method of growing planar non-polar m-plane Ill-Nitride material, such as an m- plane gallium nitride (GaN) epitaxial layer, wherein the Ill-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane Ill-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.