| 摘要 |
PROBLEM TO BE SOLVED: To form a low-cost insulation film having favorable uniformity of film thickness while maintaining a high film formation rate even under a low temperature. SOLUTION: A method of manufacturing a semiconductor device has processes of: carrying a substrate into a treatment container; performing treatment of forming an oxide film, a nitride film, or oxynitride film having a predetermined film thickness on the substrate, by alternately repeating a process of forming a layer containing predetermined elements on the substrate by supplying and discharging a first material gas containing predetermined elements and a second material gas containing predetermined elements in the treatment container, and a process of reforming the layer containing predetermined elements into an oxidation layer, a nitride layer, or an oxynitride layer by supplying and discharging a reaction gas different from the first material gas and the second material gas in the treatment container; and carrying a treated substrate out of the treatment container. Since the first material gas is more reactive than the second material gas, the supply amount of the first material gas is made smaller than that of the second material gas in the process forming the layer containing predetermined elements. COPYRIGHT: (C)2011,JPO&INPIT
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