| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacturing processes for a MOS transistor, and further prevent the threshold voltage of a parasitic MOS from being decreased. SOLUTION: The method of manufacturing a semiconductor device eliminates ion implantation of impurities for channel formation on a field oxide film 30, in the method of ion implantation of impurities for channel formation of conductivity type reverse to that of a well diffusion layer after gate electrode formation. Accordingly, the semiconductor device has a structure wherein ion implantation of impurities for channel formation is not done to the field oxide film 30. COPYRIGHT: (C)2011,JPO&INPIT |
