| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for directly producing semiconductor wafers including silicon wafers without depending on conventional ingot (CZ method). SOLUTION: In a chamber 1 filled with an inert gas, a molten body 5 of a semiconductor is held at a holding furnace 3 extended in a lengthwise direction. From above the holding furnace 3, a metal tape 2 which becomes a wafer substrate is supplied at a specific rate, supplied by lowering, and made contact with an upper surface of the silicon molten body 5. At at least one surface of the tape 2, the semiconductor is adhered by solidification, and the tape 2 is lifted upward to produce the wafer reinforced with the substrate. COPYRIGHT: (C)2011,JPO&INPIT
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