发明名称 ETCHING LIQUID FOR ETCHING SILICON SUBSTRATE REAR SURFACE IN THROUGH SILICON VIA PROCESS AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP HAVING THROUGH SILICON VIA USING THE ETCHING LIQUID
摘要 <p>Disclosed is an etching liquid, which is used for etching a silicon substrate rear surface in a through silicon via process, etches only a silicon substrate without etching a connecting plug composed of a metal, such as copper and tungsten, or a polysilicon and the like, and has an excellent etching rate. Also disclosed is a method for manufacturing a semiconductor chip having a through silicon via, wherein the etching liquid is used. The etching liquid for etching a silicon substrate rear surface in a through silicon via process contains potassium hydroxide, hydroxylamine, and water. The method for manufacturing a semiconductor chip has a step of etching the rear surface of a silicon substrate using the etching liquid.</p>
申请公布号 WO2011055825(A1) 申请公布日期 2011.05.12
申请号 WO2010JP69864 申请日期 2010.11.08
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC.;SOTOAKA, RYUJI;FUJIOTO, YOSHIKO 发明人 SOTOAKA, RYUJI;FUJIOTO, YOSHIKO
分类号 H01L21/308;H01L21/306;H01L21/3205;H01L23/52 主分类号 H01L21/308
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