发明名称 |
ETCHING LIQUID FOR ETCHING SILICON SUBSTRATE REAR SURFACE IN THROUGH SILICON VIA PROCESS AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP HAVING THROUGH SILICON VIA USING THE ETCHING LIQUID |
摘要 |
<p>Disclosed is an etching liquid, which is used for etching a silicon substrate rear surface in a through silicon via process, etches only a silicon substrate without etching a connecting plug composed of a metal, such as copper and tungsten, or a polysilicon and the like, and has an excellent etching rate. Also disclosed is a method for manufacturing a semiconductor chip having a through silicon via, wherein the etching liquid is used. The etching liquid for etching a silicon substrate rear surface in a through silicon via process contains potassium hydroxide, hydroxylamine, and water. The method for manufacturing a semiconductor chip has a step of etching the rear surface of a silicon substrate using the etching liquid.</p> |
申请公布号 |
WO2011055825(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
WO2010JP69864 |
申请日期 |
2010.11.08 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC.;SOTOAKA, RYUJI;FUJIOTO, YOSHIKO |
发明人 |
SOTOAKA, RYUJI;FUJIOTO, YOSHIKO |
分类号 |
H01L21/308;H01L21/306;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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