发明名称 HYBRID SILICON WAFER
摘要 <p>A hybrid silicon wafer which is a silicon wafer characterized by having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is produced by the unidirectional solidification melt method. The aforesaid hybrid silicon wafer which has a structure wherein the longitudinal plane of crystal grains of the polycrystalline silicon part, that is produced by the unidirectional solidification melt method, is referred to as a wafer plane and the monocrystalline silicon is embedded in such a manner that the longitudinal direction of the crystal grains of the polycrystalline silicon makes an angle of 120o-150o with respect to the cleavage plane of the monocrystalline silicon. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided.</p>
申请公布号 WO2011055672(A1) 申请公布日期 2011.05.12
申请号 WO2010JP69139 申请日期 2010.10.28
申请人 JX NIPPON MINING & METALS CORPORATION;SUZUKI RYO;TAKAMURA HIROSHI 发明人 SUZUKI RYO;TAKAMURA HIROSHI
分类号 C30B33/06;C30B11/02;C30B31/02;H01L21/02 主分类号 C30B33/06
代理机构 代理人
主权项
地址