发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a low resistance line connection in which a graphene ballistic conduction is used, and that prevents complication of a structure of the line connection and connection part of line connection part; and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device 100 includes: a substrate; a lower layer wiring 12 with a graphene nano-ribbon layer 121 that is provided in an upper substrate and composed of a multiple graphene nano-ribbon sheet 122 laminated; and a via 14 and barrier metal 15 that penetrate at least one of multiple graphene nano-ribbon sheets 122 and connect the lower layer wiring 12 with an upper layer wiring 13. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011096980(A) |
申请公布日期 |
2011.05.12 |
申请号 |
JP20090252189 |
申请日期 |
2009.11.02 |
申请人 |
TOSHIBA CORP |
发明人 |
AKIMOTO YOSUKE;WADA MAKOTO |
分类号 |
H01L21/768;H01L21/3205;H01L21/3213;H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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