<p>Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.</p>
申请公布号
WO2011005653(A8)
申请公布日期
2011.05.12
申请号
WO2010US40765
申请日期
2010.07.01
申请人
LINDE AKTIENGESELLSCHAFT;MA, CE;KIM, KEE-CHAN;MCFARLANE, GRAHAM, ANTHONY