| 摘要 |
PROBLEM TO BE SOLVED: To provide a constitution which does not influence a pellet size in the measures against electrostatic breakdown, and is not influenced by a layout. SOLUTION: A semiconductor device includes: an FET (Field Effect Transistor) formed in an FET region 200; a first impurity diffusion region 106a formed on a base-substance surface in a peripheral region 202; a gate resistance 107 including a first ohmic metal terminal 114a and a second ohmic metal terminal 114d respectively formed on one end 107a and the other end 107b of the first impurity diffusion region 106a; and a shield portion 134 in which one of a combination of a drain impurity diffusion region 106b and a drain electrode 114b or a combination of a source impurity diffusion region 106c and a source electrode 114c is present between one end 107a of the gate resistance 107 and a gate electrode 122 in planar view, and the one of the combinations is formed extending from the FET region 200 so as to cut off a straight line connecting the one end 107a and the other end 107b of the gate resistance 107. COPYRIGHT: (C)2011,JPO&INPIT
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