Stack-type semiconductor device having chips having different backside structure and electronic apparatus including the same

摘要

A stack-type semiconductor device including semiconductor chips having different backside structures and an electronic apparatus including the stack-type semiconductor device include: a base frame for a semiconductor device; a first semiconductor chip that is mounted on the base frame and has a bottom surface having a first surface roughness; and a second semiconductor chip that is mounted on the first semiconductor chip and has a bottom surface having a second surface roughness, wherein the second surface roughness is greater than the first surface roughness by 1.2 nm or more. The stack-type semiconductor device is manufactured to be thin while cracking of the first semiconductor chip is prevented. In addition, changes in data caused by charge loss resulting from diffusion of metal ions, which can occur when a stack-type semiconductor device is a memory device, is prevented.