发明名称 |
HYBRID DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH ENHANCED MOBILITY CHANNELS |
摘要 |
A semiconductor wafer structure for integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate; an electrically conductive back gate layer formed on the lower insulating layer; an upper insulating layer formed on the back gate layer; and a hybrid semiconductor-on-insulator layer formed on the upper insulating layer, the hybrid semiconductor-on-insulator layer comprising a first portion having a first crystal orientation and a second portion having a second crystal orientation.
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申请公布号 |
US2011108943(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
US20090613574 |
申请日期 |
2009.11.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DENNARD ROBERT H.;OUYANG QIQING C.;YAU JENG-BANG |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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