| 摘要 |
A method for fabricating a cellular trench metal oxide semiconductor field effect transistor (MOSFET) includes depositing a first photoresist atop a first epitaxial (epi) layer to pattern a trench area, depositing a second photoresist atop a first gate conductor layer to pattern a mesa area, etching away part of the first gate conductor layer in the mesa area to form a second gate conductor layer with a hump, and titanizing crystally the second gate conductor layer to form a Ti-gate conductor layer. Edges of the mesa area are aligned to edges of the trench area. Hence, approximately more than half of polysilicon in the second gate conductor layer is titanized crystally. A spacer can be formed to protect corners of the first gate conductor layer and to make the gate conductor structure more robust for mechanical support.
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