GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A gate structure and method of manufacturing the same are provided to implement an excellent erase saturation property by laminating a silicon oxide and high dielectric layer which has a thickness of less than 10Å. CONSTITUTION: In a gate structure and a method of manufacturing the same, a tunnel insulating film pattern(112) is formed on a substrate(100). A charge trapping layer pattern(122) is formed on the tunnel insulating film. A first silicon oxide film pattern having a thickness of less than 10Åis formed on the charge trapping film pattern. A first high dielectric pattern is formed on the first silicon oxide pattern. A second silicon oxide pattern is formed on the first high dielectric pattern.