SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A substrate for semiconductor device and a method for manufacturing the same are provided to suppress due to lattice mismatch by forming a cavity between a substrate and a GaN film. CONSTITUTION: In a substrate for semiconductor device and a method for manufacturing the same, hexagonal concave part(112) and an uneven convex part are formed on the surface of a substrate. The uneven structure has roughness of 14Å-110Å. A base buffer layer is formed in the uneven structure. A compound semiconductor film is formed in the buffer layer to make the uneven structure flat. A plurality of cavities(150) are formed between the substrate and the compound semiconductor film.