| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a prescribed resist pattern on a substrate while reducing to be small the amount of a resist liquid to be fed in the second time in double patterning. <P>SOLUTION: The resist liquid is applied to a wafer W, on which a film F to be processed is formed, to form a first resist film R1 (Fig.7(b)). Then, the first resist film R1 is selectively exposed to light, and development is made to form a first resist pattern P1 (Fig.7(c)). After that, a surface modifier such as an ether is applied to the surface P1a of the first resist pattern P1 to modify the surface P1a (Fig.7(d)). After that, the resist liquid is applied to the wafer W, on which the first resist pattern P1 is formed, to form a second resist film R2 (Fig.7(e)). Then, the second resist film R2 is selectively exposed to light, and development is made to form a second resist pattern P2 on the same layer as the first resist pattern P1 (Fig.7(f)). <P>COPYRIGHT: (C)2011,JPO&INPIT |
