THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL THAT CAN BE USED WITH SAID METHOD

摘要

Particles coming from an evaporation source 9 are deposited on a substrate 21 at a predetermined film forming position 33 in a vacuum so as to form a thin film on the substrate 21. A bulk material 32 containing a source material of the thin film is melted above the evaporation source 9, and the melted material is supplied to the evaporation source 9 in the form of droplets 14. A silicon material 32 including a plurality of pores therein is used as the bulk material 32. Preferably, the pores have a lower average internal pressure than an atmospheric pressure. More preferably, the average internal pressure is 0.1 atm or less.