发明名称 SOLID-STATE IMAGING APPARATUS, AND IMAGING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus which can operate at high speed by suppressing p-well potential variation while preventing overflow of charges, which may occur during motion picture capturing, from thinning lines to adjacent pixels. SOLUTION: A solid-state imaging apparatus includes, inside a plurality of pixels 201 disposed in a two-dimensional shape: a photodiode 202; a read transistor 203 for reading stored charges from the photodiode 202; an FD 204 for holding read-out charges; a reset transistor 205 for resetting the FD 204 into initial state; and an amplification transistor 206 for receiving a potential of the FD 204 and amplifying/outputting its signal. A pulsewidth of discharge pulses, to be applied to the read transistor 203, on (n) lines of thinning lines is made narrower than a pulsewidth of read pulses, to be applied to the read transistor 203, on (n+1) lines which are reading lines. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011097632(A) 申请公布日期 2011.05.12
申请号 JP20110001739 申请日期 2011.01.07
申请人 PANASONIC CORP 发明人 MASUYAMA MASAYUKI;HARA KUNIHIKO;MURAKAMI MASAFUMI;NEZAKI SHINSUKE
分类号 H04N5/374;H04N5/345;H04N5/353;H04N5/357 主分类号 H04N5/374
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