| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for analyzing a semiconductor substrate which can perform etching the semiconductor substrate having a membrane comprising polysilicon or the like and suppress the etching of a wafer base material. SOLUTION: In the method for analyzing the semiconductor substrate, the semiconductor substrate containing an analyte is etched by a vapor phase cracking method using hydrogen fluoride vapor and ozone-containing gas produced by discharge, and a recovery liquid is discharged on the semiconductor substrate after etching, so that the analyzing target is recovered along with the recovery liquid. By this analyzing method, a very small amount of the analyte can be analyzed with high sensitivity. COPYRIGHT: (C)2011,JPO&INPIT
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