发明名称 Semiconductor devices having on-die termination structures for reducing current consumption and termination methods performed in the semiconductor devices
摘要 Example embodiments disclose a semiconductor device having an on-die termination (ODT) structure that reduces current consumption, and a termination method performed in the semiconductor device. The semiconductor device includes a calibration circuit for generating calibration codes in response to a reference voltage and a voltage of a calibration terminal connected to an external resistor and an on-die termination device for controlling a termination resistance of a data input/output pad in response to the calibration codes and an on-die termination control signal. The termination resistance of the data input/output pad is greater than a resistance of the calibration terminal.
申请公布号 US2011109344(A1) 申请公布日期 2011.05.12
申请号 US20100662511 申请日期 2010.04.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JUNG-HWAN;KIM YANG-KI;CHOI YOUNG
分类号 H03K19/003 主分类号 H03K19/003
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