发明名称 |
Semiconductor devices having on-die termination structures for reducing current consumption and termination methods performed in the semiconductor devices |
摘要 |
Example embodiments disclose a semiconductor device having an on-die termination (ODT) structure that reduces current consumption, and a termination method performed in the semiconductor device. The semiconductor device includes a calibration circuit for generating calibration codes in response to a reference voltage and a voltage of a calibration terminal connected to an external resistor and an on-die termination device for controlling a termination resistance of a data input/output pad in response to the calibration codes and an on-die termination control signal. The termination resistance of the data input/output pad is greater than a resistance of the calibration terminal.
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申请公布号 |
US2011109344(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
US20100662511 |
申请日期 |
2010.04.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JUNG-HWAN;KIM YANG-KI;CHOI YOUNG |
分类号 |
H03K19/003 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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