| 摘要 |
<p>Disclosed is a low-power consumption hydrogen gas sensor of the MISFET type capable of operating for one or more years using a low-voltage power supply (for example, 1.5 to 3 V). An FET for a sensor is formed in an MEMS area (34) of an SOI substrate from which an Si substrate (22) is hollowed out. A heater wiring line (32) is folded and disposed between a Pt-Ti-O gate (28) and a source electrode (31S) of the FET for the sensor and between the Pt-Ti-O gate (28) and a drain electrode (31D) of the FET for the sensor. In addition, a plurality of through-holes (36) are formed in an area where the MEMS area (34) does not overlap with an intrinsic FET area (35) in which the FET for the sensor is formed except for bridge areas (90, 90S, 90G, 90H) in which lead wires (20S, 20D, 20G, 20H) are formed and a reinforcing area (91) by removing a protective film such that an embedded insulating layer of the SOI substrate is exposed through the through-holes.</p> |
