SILICON CARBIDE MOSFET WITH SHORT CHANNEL

摘要

PURPOSE: A silicon carbide field effect transistor with a short channel is provided to reduce channeling effects when ions are injected in the off direction of a silicon single crystal epi thin film, thereby accurately predicting a channel length. CONSTITUTION: A silicon oxide film is eliminated from a gate oxide film by a dry or wet etching process. The gate oxide film is formed on a silicon carbide epi thin film layer between a second conductive well area and a first conductive source area. A gate electrode(10) is formed on the gate oxide film by using poly-silicon or metal. A field oxide film(11) electrically separates the gate electrode from the first conductive source area. A source electrode is formed on the source area of a silicon carbide epi thin film layer by metal deposition to electrically connect a source and an external electrode onto the first conductive source area. A drain electrode(13) is formed on the rear surface of a silicon carbide substrate.